ESD Diode DFN1006 Series ESD0502L

SMD Plastic-Encapsulate ESD Protection Diodes, DFN1006-3L series, 3 pads, ESD0502L Type,

Key Features:
  • Series: DFN1006-3L
  • Peak Power Dissipation: 60W (8/20µs)
  • Reverse Working Voltage @ I/O pin to Ground: 5.0V
  • ESD per IEC 61000-4-2 (Air): ±20KV
  • ESD per IEC 61000-4-2 (Contact): ±20KV
  • Operating Temperature: -55°C ~ +125°C

$0.1550

Out of stock
SKU DFN10063L0S52L
Original MPNESD0502L
Datasheet Data Sheet

Description

SMD Plastic-Encapsulate ESD Protection Diodes, DFN1006-3L series, 3 pads, ESD0502L Type,

• Peak Power Dissipation 60W (8/20µs)
• Transient protection for high speed data lines
• IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
• IEC61000-4-4 (EFT) 40A (5/50ns)
• Cable Discharge Event (CDE)
• Small package L1.0*W0.6*H0.5mm
• Protect two data lines
• Low clamping voltage
• Low leakage current
• Low Capacitance: 0.2pF Typical (I/O – I/O)

APPLICATION

• Serial ATA
• Desktops, Servers and Notebooks
• PCI Express
• MDDI Ports
• USB Data Line Protection
• Display Ports
• Digital Visual Interfaces (DVI)

Specification

Series

DFN1006-3L

Peak Power Dissipation

60W (8/20µs)

Reverse Working Voltage @ I/O pin to Ground

5.0V

ESD per IEC 61000-4-2 (Air)

±20KV

ESD per IEC 61000-4-2 (Contact)

±20KV

Reverse Leakage Current @V RWM = 5V Between I/O and GND

100nA

Clamping Voltage @ I PP = 1.0A, t p = 8/20μs Between I/O and GND

10V

Clamping Voltage @ I PP = 4.0A, t p = 8/20μs Between I/O and GND

15V

Forward Voltage @ I T = 10 mA Between I/O and GND

1.2V

Total Capacitance @ V R = 0 V, f = 1.0MHz Between I/O and GND

0.6pF

Total Capacitance @ V R = 0 V, f = 1.0MHz Between I/O and I/O

0.3pF

Operating Temperature

-55°C ~ +125°C

Mounting Type

Surface Mount

Package / Case

DFN1006-3L series

RoHS Status

RoHS III Compliant

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

HTSUS

8541.21.0075

Standard Package (MPQ)

10000pcs/Reel, Quantity entered must be multiple of 10000

NCNR

Non-Cancelable/Non-Returnable