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ESD Diode DFN1006 Series ESD8D3V3

SMD Plastic-Encapsulate ESD Protection Diodes, DFN1006 series, ESD8D3V3 Type, Low Capacitance ESD Protection Diodes, Reverse Working Voltage: 3.3V, Clamping Voltage : 10V Max.@ 5.0A

Key Features:
  • Series: DFN1006
  • Peak power dissipation: 150mW (8/20µs)
  • Reverse Working Voltage: 3.3V
  • ESD per IEC 61000-4-2 (Air): ±30KV
  • ESD per IEC 61000-4-2 (Contact): ±22KV
  • Reverse Leakage Current @V RWM = 3.3V: 2.5uA
  • Operating Temperature: -55°C ~ +125°C
See Full Specification

$0.1585

120000 in stock
SKU DFN1006D3V3SYA
Original MPNESD8D3V3
Datasheet Data Sheet
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Description

SMD Plastic-Encapsulate ESD Protection Diodes, DFN1006 series, ESD8D3V3 Type, Low Capacitance ESD Protection Diodes, Reverse Working Voltage: 3.3V, Clamping Voltage : 10V Max.@ 5.0A

• Peak Power Dissipation 150mW (8/20µs)
• Transient protection for high speed data lines
• IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
• Low clamping voltage
• Low leakage current
• Working voltage: 3.3V/5V/8V/12V

APPLICATION

• Cell phone handsets and accessories
• Desktops, Servers and Notebooks
• Microprocessor based equipment
• Personal Digital Assistants (PDA’s)
• Portable Instrumentation
• Peripherals
• Pagers

Specification

Series

DFN1006
Part Status

Active
Supplier Device Package

DFN1006 series, ESD8D3V3 Type
Peak power dissipation

150mW (8/20µs)
Reverse Working Voltage

3.3V
ESD per IEC 61000-4-2 (Air)

±30KV
ESD per IEC 61000-4-2 (Contact)

±22KV
Reverse Leakage Current @V RWM = 3.3V

2.5uA
Clamping Voltage @ I PP = 5.0A, t p = 8/20μs

10.0V
Clamping Voltage @ I PP = 7.5A, t p = 8/20μs

11.5V
Capacitance VR = 0V, f = 1MHz

105pF
Operating Temperature

-55°C ~ +125°C
Mounting Type

Surface Mount
Package / Case

DFN1006
RoHS Status

RoHS III Compliant
Moisture Sensitivity Level (MSL)

1 (Unlimited)
REACH Status

REACH Unaffected
HTSUS

8541.21.0075
Standard Package (MPQ)

10000pcs/Reel, Quantity entered must be multiple of 10000
NCNR

Non-Cancelable/Non-Returnable

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