SMD Plastic-Encapsulate MOSFETS, SOT-23 series, 3 pads, AO3400 -5.8AType, 30V N-Channel enhancement Mode Field effect, Transistor Continuous Drain Current: 5.8A, Maximum Power Dissipation: 1.5W
SMD Plastic-Encapsulate MOSFETS, SOT-23 series, 3 pads, AO3400 -5.8AType, 30V N-Channel enhancement Mode Field effect, Transistor Continuous Drain Current: 5.8A, Maximum Power Dissipation: 1.5W
• High dense cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC current capability
APPLICATION
• Load Switch for Portable Devices
• DC/DC Converter
| Series | SOT-23 |
|---|---|
| Part Status | Active |
| Supplier Device Package | SOT-23 series, 3 pads |
| Drain-Source Breakdown Voltage | 30V |
| Gate-Source Voltage | +/-12V |
| Continuous Drain Current | 5.8A |
| Power Dissipation | 1.5W |
| Thermal Resistance Junction-Ambient | 100°C/W |
| Gate-source Leakage Current | +/-100nA |
| Gate threshold voltage | 1.2V |
| Operating Junction Temperature | +150°C |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23 series, 3 pads |
| RoHS Status | RoHS III Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| HTSUS | 8541.21.0075 |
| Standard Package (MPQ) | 3000pcs/Reel, Quantity entered must be multiple of 3000 |
| NCNR | Non-Cancelable/Non-Returnable |
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SMD Plastic-Encapsulate MOSFETS, TO -220F series, 3 Pins MDD12N65F Type, 650V N-Channel Enhancement Mode MOSFET, Drain-Source Voltage: 650V, Continuous Drain Current 12A, Junction Temperature: +150°C,
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