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- ESD Diode
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Latest Products
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SMD MOSFETS SOT-23 Series 2N7002K
$0.0885
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SMD MOSFETS SOT-23 Series BSS84
$0.0885
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SMD MOSFETS SOT-23 Series SI2301S-2.3A
$0.1655
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SMD MOSFETS SOT-23 Series SI2301-3A
$0.2055
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ESD Diode SOD-323 Series SD15C
$0.1895
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- Series: SOT-23
- Peak power dissipation: 130W (8/20µs)
- Reverse Working Voltage @I/O to GND: 5.0V
- ESD per IEC 61000-4-2 (Air): ±30KV
- ESD per IEC 61000-4-2 (Contact): ±20KV
SMD Plastic-Encapsulate ESD Protection Diodes, SOT-23 series, 3 pads, SM05OC Type, Reverse Working Voltage 5V, Clamping Voltage 8.5V Max.@ 1.0A
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- Series: SOT-23
- Peak power dissipation: 350W (8/20µs)
- Reverse Working Voltage: 12V
- ESD per IEC 61000-4-2 (Air): ±15KV
- ESD per IEC 61000-4-2 (Contact): ±8KV
SMD Plastic-Encapsulate ESD Protection Diodes, SOT-23 series, 3 pads, SM12 Type, Uni-directional TVS Diodes Array, Reverse Working Voltage : 12V, Peak Pulse Power per (8/20μs): 350 Watts
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- Series: SOT-23
- Peak power dissipation: 130W (8/20µs)
- Reverse Working Voltage @I/O to GND: 12.0V
- ESD per IEC 61000-4-2 (Air): ±30KV
- ESD per IEC 61000-4-2 (Contact): ±20KV
SMD Plastic-Encapsulate ESD Protection Diodes, SOT-23 series, 3 pads, SM12OC Type, Bi-Directional Channe, Reverse Working Voltage 12V, Clamping Voltage 19V Max.@ 1.0A
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- Series: SOT-23
- Peak power dissipation: 350W (8/20µs)
- Reverse Working Voltage @I/O to GND: 24V
- ESD per IEC 61000-4-2 (Air): ±15KV
- ESD per IEC 61000-4-2 (Contact): ±8KV
SMD Plastic-Encapsulate ESD Protection Diodes, SOT-23 series, 3 pads, SM15 Type, TVS Diodes Array Uni-directional Channels, Reverse Working Voltage 15V, Clamping Voltage 24VC Max.@1.0A
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- Series: SOT-23
- Peak power dissipation: 350W (8/20µs)
- Reverse Working Voltage @I/O to GND: 15V
- ESD per IEC 61000-4-2 (Air): ±15KV
- ESD per IEC 61000-4-2 (Contact): ±8KV
SMD Plastic-Encapsulate ESD Protection Diodes, SOT-23 series, 3 pads, SM15C Type, TVS Diodes Array Bi-directional Channels, Reverse Working Voltage 15V, Clamping Voltage 24VC Max.@1.0A
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- Series: SOT-23
- Peak power dissipation: 350W (8/20µs)
- Reverse Working Voltage @I/O to GND: 24V
- ESD per IEC 61000-4-2 (Air): ±15KV
- ESD per IEC 61000-4-2 (Contact): ±8KV
SMD Plastic-Encapsulate ESD Protection Diodes, SOT-23 series, 3 pads, SM24C Type, TVS Diodes Array Bi-directional Channels, Reverse Working Voltage : 24V, Clamping Voltage 43VC Max.@1.0A
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- Series: SOT-23
- Peak power dissipation: 200W (8/20µs)
- Reverse Working Voltage @I/O to GND: 24V
- ESD per IEC 61000-4-2 (Contact): ±20KV
SMD Plastic-Encapsulate ESD Protection Diodes, SOT-23 series, 3 pads, SM24QC Type, Dual Line CAN bus protection Diodes, Reverse Working Voltage 24V, Clamping Voltage : 36V Max.@ 1.0A
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- Series: SOT-23
- Peak power dissipation: 400W (8/20µs)
- Reverse Working Voltage Pin 3 to Pin 1 or Pin 2 to Pin 1: 12V/7V
- ESD per IEC 61000-4-2 (Air): ±15KV
- ESD per IEC 61000-4-2 (Contact): ±8KV
SMD Plastic-Encapsulate ESD Protection Diodes, SOT-23 series, 3 pads, SM712 Type, Asymmetrical TVS Diodes for extended Common-Mode RS-485, Reverse Working Voltage : 12V/7V, Clamping Voltage 20V/12 Max.@5.0A
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- Series: DFN1006-3L
- Peak Power Dissipation: 60W (8/20µs)
- Reverse Working Voltage @ Any I/O pin to GND: 5.0V
- ESD per IEC 61000-4-2 (Air): ±25KV
- ESD per IEC 61000-4-2 (Contact): ±20KV
SMD Plastic-Encapsulate ESD Protection Array, SOT-26 series, 6 pads, ESD0504TL Type, Ultra Low Capacitance TVs Diodes, Reverse Working Voltage: 5.0V, Clamping Voltage 10VC Max.@1.0A
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- Series: DO-41
- Repetitive peak reverse voltage: 1000Volts
- RMS voltage: 700Volts
- DC blocking voltage: 1000Volts
- Instantaneous forward voltage at 1.0A: 1.30Volts
- Junction capacitance: 15pF
Axial Lead Fast Recovery Rectifier, DO-41 series, FR107 Type 2 Pins, Reverse Voltage 1000V Max. Forward Current 1.0A Max.
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- Series: SMA
- Repetitive peak reverse voltage: 1000Volts
- RMS voltage: 700Volts
- DC blocking voltage: 1000Volts
- Instantaneous forward voltage at 1.0A: 1.30Volts
- Junction capacitance: 15pF
SMD Fast Recovery Rectifier, SMA series, RS1M Type, 2 Pads, Reverse Voltage 1000V Max. Forward Current 1.0A Max.
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- Series: SMA
- Repetitive peak reverse voltage: 1000Volts
- RMS voltage: 700Volts
- DC blocking voltage: 1000Volts
- Instantaneous forward voltage at 2.0A: 1.30Volts
- Junction capacitance: 50pF
SMD Fast Recovery Rectifier, SMA series, RS2M Type, 2 Pads, Reverse Voltage 1000V Max. Forward Current 2.0A Max.
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- Series: SMB
- Repetitive peak reverse voltage: 1000Volts
- RMS voltage: 700Volts
- DC blocking voltage: 1000Volts
- Instantaneous forward voltage at 2.0A: 1.30Volts
- Junction capacitance: 50pF
SMD Fast Recovery Rectifier, SMB series, RS2MB Type, 2 Pads, Reverse Voltage 1000V Max. Forward Current 2.0A Max.
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- Series: SMC
- Repetitive peak reverse voltage: 1000Volts
- RMS voltage: 700Volts
- DC blocking voltage: 1000Volts
- Instantaneous forward voltage at 3.0A: 1.30Volts
- Junction capacitance: 60pF
SMC Fast Recovery Rectifier, SMC series, RS3MC Type, 2 Pads, Reverse Voltage 1000V Max. Forward Current 3.0A Max.
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- Series: DO-41
- Repetitive peak reverse voltage: 1000Volts
- RMS voltage: 700Volts
- DC blocking voltage: 1000Volts
- Instantaneous forward voltage at 1.0A: 1.70Volts
- Junction capacitance: 12pF
Axial Lead High Efficiency Rectifier, DO-41 series, HER108-T/B Type 2 Pins Reverse Voltage 1000V Max. Forward Current 1.0A Max.
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- Series: SMA
- Repetitive peak reverse voltage: 1000Volts
- RMS voltage: 700Volts
- DC blocking voltage: 1000Volts
- Instantaneous forward voltage at 1.0A: 1.70Volts
- Junction capacitance: 15pF
SMD High Efficiency Rectifier, 2 Pads, SMA series, US1M Type Reverse Voltage 1000V Max. Forward Current 1.0A Max.
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- Series: SMA
- Repetitive peak reverse voltage: 1000Volts
- RMS voltage: 700Volts
- DC blocking voltage: 1000Volts
- Instantaneous forward voltage at 2.0A: 1.70Volts
- Junction capacitance: 28pF
SMD High Efficiency Rectifier, 2 Pads, SMA series, US2M Type Reverse Voltage 1000V Max. Forward Current 2.0A Max.
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- Series: SMAF
- Repetitive peak reverse voltage: 100Volts
- RMS voltage: 70Volts
- DC blocking voltage: 100Volts
- Instantaneous forward voltage at 1.0A: 0.85Volts
- Junction capacitance: 80pF
SMD High Efficiency Rectifier, 2 Pads, SMAF series, SS110F Type, Reverse Voltage 100V Max. Forward Current 1.0A Max
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- Series: SMAF
- Repetitive peak reverse voltage: 60Volts
- RMS voltage: 42Volts
- DC blocking voltage: 60Volts
- Instantaneous forward voltage at 1.0A: 0.70Volts
- Junction capacitance: 80pF
SMD High Efficiency Rectifier, 2 Pads, SMAF series, SS16F Type, Reverse Voltage 60V Max. Forward Current 1.0A Max
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- Series: SMAF
- Repetitive peak reverse voltage: 100Volts
- RMS voltage: 70Volts
- DC blocking voltage: 100Volts
- Junction capacitance: 80pF
SMD High Efficiency Rectifier, 2 Pads, SMAF series, SS210F Type, Reverse Voltage 100V Max. Forward Current 2.0A Max
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- Series: SMAF
- Repetitive peak reverse voltage: 1000Volts
- RMS voltage: 700Volts
- DC blocking voltage: 1000Volts
- Instantaneous forward voltage at 1.0A: 1.70Volts
- Junction capacitance: 15pF
SMD High Efficiency Rectifier, 2 Pads, SMAF series, US1MF Type Reverse Voltage 1000V Max. Forward Current 1.0A Max.
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- Series: SMAF
- Repetitive peak reverse voltage: 1000Volts
- RMS voltage: 700Volts
- DC blocking voltage: 1000Volts
- Junction capacitance: 20pF
SMD High Efficiency Rectifier, 2 Pads, SMAF series, US2MF Type, Reverse Voltage 1000V Max. Forward Current 2.0A Max.
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- Series: SOD-123FL
- Repetitive peak reverse voltage: 1000Volts
- RMS voltage: 700Volts
- DC blocking voltage: 1000Volts
- Instantaneous forward voltage at 1.0A: 1.70Volts
- Junction capacitance: 15pF
SMD High Efficiency Rectifier, 2 Pads, SOD-123FL series, SOD1H8 Type Reverse Voltage 1000V Max. Forward Current 1.0A Max.
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- Series: TO -220F
- Drain-Source Breakdown Voltage: 650V Min.
- Continuous Drain Current: 10A
- Power Dissipation: 40W
- Junction-to-ambient Thermal Resistance: 110°C/W
- Gate-Source Leakage Current: +/-100nA
- Junction Temperature: +150°C
SMD Plastic-Encapsulate MOSFETS, TO -220F series, 3 Pins, MDD10N65F Type, 650V N-Channel Enhancement Mode MOSFET, Drain-Source Voltage: 650V, Continuous Drain Current 10A, Junction Temperature: +150°C,
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- Series: TO -220F
- Drain-Source Breakdown Voltage: 650V Min.
- Continuous Drain Current: 12A
- Power Dissipation: 42W
- Junction-to-ambient Thermal Resistance: 110°C/W
- Gate-Source Leakage Current: +/-100nA
- Junction Temperature: +150°C
SMD Plastic-Encapsulate MOSFETS, TO -220F series, 3 Pins MDD12N65F Type, 650V N-Channel Enhancement Mode MOSFET, Drain-Source Voltage: 650V, Continuous Drain Current 12A, Junction Temperature: +150°C,
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- Series: TO -220F
- Drain-Source Breakdown Voltage: 650V Min.
- Continuous Drain Current: 4.0A
- Power Dissipation: 32W
- Junction-to-ambient Thermal Resistance: 62.5°C/W
- Gate-Source Leakage Current: +/-100nA
- Junction Temperature: +150°C
SMD Plastic-Encapsulate MOSFETS, TO-220F series, 3 Pins MDD4N65F Type, 650V N-Channel Enhancement Mode MOSFET, Drain-Source Voltage: 650V, Continuous Drain Current 4.0A, Junction Temperature: +150°C
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- Series: TO -220F
- Drain-Source Breakdown Voltage: 650V Min.
- Continuous Drain Current: 7.0A
- Power Dissipation: 39W
- Junction-to-ambient Thermal Resistance: 62.5°C/W
- Gate-Source Leakage Current: +/-100nA
- Junction Temperature: +150°C
SMD Plastic-Encapsulate MOSFETS, TO -220F series, 3 Pins MDD7N65F Type, 650V N-Channel Enhancement Mode MOSFET, Drain-Source Voltage: 650V, Continuous Drain Current 7.0A, Junction Temperature: +150°C
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- Series: TO-252 series
- Drain-Source Breakdown Voltage: 650V Min.
- Continuous Drain Current: 4.0A
- Power Dissipation: 77W
- Junction-to-ambient Thermal Resistance: 110°C/W
- Gate-Source Leakage Current: +/-100nA
- Junction Temperature: +150°C
SMD Plastic-Encapsulate MOSFETS, TO -252 series, 3 Pins MDD4N65D Type, 650V N-Channel Enhancement Mode MOSFET, Drain-Source Voltage: 650V, Continuous Drain Current 4.0A, Junction Temperature: +150°C
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- Series: TO-252 series
- Drain-Source Breakdown Voltage: 650V Min.
- Continuous Drain Current: 7.0A
- Power Dissipation: 100W
- Junction-to-ambient Thermal Resistance: 110°C/W
- Gate-Source Leakage Current: +/-100nA
- Junction Temperature: +150°C
SMD Plastic-Encapsulate MOSFETS, TO -252 series, 3 Pins MDD7N65D Type, 650V N-Channel Enhancement Mode MOSFET, Drain-Source Voltage: 650V, Continuous Drain Current 7.0A, Junction Temperature: +150°C
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- Series: SMA
- Repetitive peak reverse voltage: 1000V
- RMS voltage: 700V
- Average forward output rectified current at TL= 110°C: 1.0A
- Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method): 30A
- Instantaneous forward voltage at 1.0A: 1.1V
SMD General Rectifier, SMA series, M7 Type, Reverse Voltage 1000V Max. Forward Current 1.0A Max
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- Series: SMC/DO-214AA
- Repetitive peak reverse voltage: 1000V
- RMS voltage: 700V
- Average forward output rectified current: 2.0A
- Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method): 30A
- Instantaneous forward voltage at 2.0A: 1.1V
SMD General Purpose Rectifier, SMB/DO-214AA series, S2MB Type, 2 Pads, Reverse Voltage 1000V Max. Forward Current 2.0A Max.
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- Series: SMC/DO-214AA
- Repetitive peak reverse voltage: 1000V
- RMS voltage: 700V
- Average forward output rectified current: 3.0A
- Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method): 90A
- Instantaneous forward voltage at 3.0A: 1.1V
SMD General Purpose Rectifier, SMB/DO-214AA series, S3MB Type, 2 Pads, Reverse Voltage 1000V Max. Forward Current 3.0A Max.
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